M6存储器,M6存储器型号大全
- 存储器型号
- 品牌
- 功能描述
- M62021
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62021FP
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62021L
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62021P
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62023
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62023FP
- Mitsubishi
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62023L
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M62023L07
- RENESAS[Renesas Technology Corp]
- System Reset with Switch Memory Back-up
- M62023L_07
- Renesas Technology Corp
- System Reset IC with Switch for 3V Memory Back-up
- M62023P
- Mitsubishi Electric Semiconductor
- SYSTEM RESET WITH SWITCH MEMORY BACK-UP
- M65601
- Atmel
- Very Power CMOS SRAM
- M65608E
- Atmel
- Very Power CMOS SRAM Tolerant
- M65608ENBSP
- Atmel Corp
- Tolerant 128Kx8 Very Power CMOS SRAM
- M65608E_07
- ATMEL Corporation
- Rad. Tolerant 128K x 8 5-volts Very Low Power CMOS SRAM
- M65608E_09
- ATMEL Corporation
- Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
- M65609E
- Atmel Corp
- Hard Volt 128Kx8 Very Power CMOS SRAM
- M65609E07
- ATMEL
- Hard 128K 3.3-volt Very Power CMOS SRAM
- M65609ENBSP
- Atmel corp
- Hard Volt 128Kx8 Very Power CMOS SRAM
- M65609E_07
- ATMEL Corporation
- Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM
- M66223FP
- Renesas Technology Corp
- Mail That Incorporates Complete CMOS Shared Memory Cell
- M66250
- Mitsubishi Electric Semiconductor
- 5120 8-BIT LINE MEMORY(FIFO/LIFO)
- M66250FP
- Mitsubishi Electric Semiconductor
- 5120 8-BIT LINE MEMORY(FIFO/LIFO)
- M66250P
- Mitsubishi Electric Semiconductor
- 5120 8-BIT LINE MEMORY(FIFO/LIFO)
- M66252FP
- Mitsubishi Electric Semiconductor
- 1152 8-BIT LINE MEMORY FIFO
- M66252P
- Mitsubishi
- 1152 LINE MEMORY (FIFO)
- M66255FP
- Mitsubishi
- 8192 10-BIT LINE MEMORY (FIFO)
- M66256
- 5120 8-BIT LINE MEMORY (FIFO)
- M66256FP
- Mitsubishi
- 5120 ?8-BIT LINE MEMORY (FIFO)
- M66257
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- 5120 8-BIT LINE MEMORY (FIFO)
- M66257FP
- Mitsubishi
- 5120 8-BIT LINE MEMORY (FIFO)
- M66258
- Mitsubishi Electric Semiconductor
- 8192 8-BIT LINE MEMORY
- M66258FP
- Mitsubishi Electric Semiconductor
- 8192 8-BIT LINE MEMORY
- M66280FP
- Mitsubishi Electric Semiconductor
- 5120 8-BIT LINE MEMORY
- M66281FP
- Mitsubishi Electric Semiconductor
- 5120 8-BIT LINE MEMORY
- M66282FP
- Mitsubishi Electric Semiconductor
- 8192 8-BIT LINE MEMORY
- M66287FP
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- 262144-word 8-bit 3-FIELD MEMORY
- M66288FP
- Renesas Technology Corp
- 262144-word 8-bit 3-FIFO MEMORY
- M66300FP
- Mitsubishi Electric Semiconductor
- PARALLEL-IN SERIAL-OUT DATA BUFFER WITH FIFO
- M66300P
- Mitsubishi Electric Semiconductor
- PARALLEL-IN SERIAL-OUT DATA BUFFER WITH FIFO
- M6630OP
- Mitsubishi
- PARALLEL-IN SERIAL-OUT DATA BUFFER WITH FIFO
- M66850FP
- Mitsubishi
- SRAM TYPE FIFO MEMORY
- M66850J
- Mitsubishi
- SRAM TYPE FIFO MEMORY
- M66851FP
- Mitsubishi
- SRAM TYPE FIFO MEMORY
- M66851J
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- SRAM TYPE FIFO MEMORY
- M66852FP
- Mitsubishi
- SRAM TYPE FIFO MEMORY
- M66852J
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- SRAM TYPE FIFO MEMORY
- M66853FP
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- SRAM TYPE FIFO MEMORY
- M66853J
- MITSUBISHI[Mitsubishi Electric Semiconductor]
- SRAM TYPE FIFO MEMORY
- M67201A
- Atmel
- CMOS Parallel FIFO
- M67202A
- Atmel
- CMOS Parallel FIFO
- M67204H
- ATMEL Corporation
- Rad. Tolerant High Speed 4 Kb x 9 Parallel FIFO
- M672061E
- Atmel
- CMOS With Programmable Half Full Flag Parallel FIFO Tolerant
- M672061FNBSP
- Atmel Corp
- Tolerant High Speed 16Kx9 Parallel FIFO with Programmable Flag
- M672061H
- ATMEL Corporation
- Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO with Programmable Flag
- M67206E
- Atmel
- High Speed CMOS Parallel FIFO Tolerant
- M67206FNBSP
- Atmel Corp
- Tolerant High Speed 16Kx9 Parallel FIFO
- M67206H
- ATMEL Corporation
- Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO
- M68AF127BL55MC6
- 1Mbit 128K Asynchronous SRAM
- M68AR128ML55ZB1T
- Mbit (128K 1.8V Asynchronous SRAM
- M68AR128ML55ZB6T
- Mbit (128K 1.8V Asynchronous SRAM
- M68AR128ML70ZB6T
- Mbit (128K 1.8V Asynchronous SRAM
- M68AW031AL70MS6U
- Kbit 3.0V Asynchronous SRAM
- M68AW031AM70NS6U
- Microelectronics
- Kbit 3.0V Asynchronous SRAM
- M68AW256ML70ND1T
- Mbit (256K 3.0V Asynchronous SRAM
- M68HC11A0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11A1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11A7
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11A8
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11CFD
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11CFG
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11E0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11E1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11E8
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11E9
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11K0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11K1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11K2
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC11K3
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68HC711CFD
- Motorola,
- CONFIG REGISTER PROGRAMMING EEPROM-BASED MICROCONTROLLERS
- M68HC711CFG
- Motorola,
- CONFIG REGISTER PROGRAMMING EEPROM-BASED MICROCONTROLLERS
- M68HC711CFG/D
- Motorola, Inc
- CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
- M68HC711CFGD
- Motorola,
- CONFIG REGISTER PROGRAMMING EEPROM-BASED MICROCONTROLLERS
- M68L11A0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11A1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11A7
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11A8
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11E0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11E1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11E8
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11E9
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11K0
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11K1
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11K2
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M68L11K3
- Motorola,
- CONFIG Register Programming EEPROM-based M68HC11 Microcontrollers
- M6MBG166S4BWG
- Mitsubishi
- CMOS 3.3V only flash memory
- M6MBT166S4BWG
- Mitsubishi
- CMOS 3.3V only flash memory
- M6MF16S2AVP
- CMOS 3.3V-ONLY FLASH MEMORY CMOS STATIC STACKED-MCP
- M6MFB16S2TP
- Mitsubishi Electric Semiconductor
- 16777216-BIT(2M x 8-BIT/1Mx 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
- M6MFT16S2TP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS STATIC
- M6MGB
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT CMOS 3.3V-ONLY FLASH MEMORY
- M6MGB160S2BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGB160S4BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGB162S2BVP
- Mitsubishi Electric Electronics
- MIXED MEMORY,SRAM EEPROM,HYBRID,TSSOP,48PIN,PLASTIC
- M6MGB162S4BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGBT160S2BVP
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT 2,097,152-WORD 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
- M6MGBT160S4BVP
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT 2,097,152-WORD 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
- M6MGBT162S2BVP
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT CMOS 3.3V-ONLY FLASH MEMORY
- M6MGBT162S4BVP
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT CMOS 3.3V-ONLY FLASH MEMORY
- M6MGBT166S2BWG
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT CMOS 3.3V-ONLY FLASH MEMORY
- M6MGBT166S4BWG
- Mitsubishi
- 16,777,216-BIT (1,048,576 -WORD 16-BIT CMOS 3.3V-ONLY FLASH MEMORY
- M6MGD137W34DWG
- Renesas Technology Corp
- 134,217,728-BIT (8,388,608-WORD 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD 16-BIT) CMOS MOBILE
- M6MGD13TW34DWG
- Renesas Technology Corp
- 134,217,728-BIT (8,388,608-WORD 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD 16-BIT) CMOS MOBILE
- M6MGD13TW66CWG-P
- 134,217,728-BIT (8,388,608-WORD 16-BIT) CMOS FLASH MEMORY 67,108,864-BIT (4,194,304-WORD 16-BIT) CMOS MOBILE
- M6MGD967W3
- RENESA
- 100,663,296-BIT (6,291,456-WORD 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD 16-BIT) CMOS Mobile
- M6MGT160S2BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGT160S4BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGT162S2BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGT162S4BVP
- Mitsubishi Electric Semiconductor
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-MCP
- M6MGT166S2BWG
- Mitsubishi
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-CSP
- M6MGT166S4BWG
- Mitsubishi
- CMOS 3.3V-ONLY FLASH MEMORY CMOS SRAM Stacked-CSP
- M6MGT331S4BKT
- Renesas Technology Corp
- 33,554,432-BIT (2,097,152 WORD 16-BIT/4,194,304-WORD 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 4,194,304-BIT (262,144-WORD 16-BIT/524,288-WORD
- M6MGT331S8AKT
- Renesas Technology Corp
- 33,554,432-BIT (2,097,152 WORD 16-BIT /4,194,304-WORD 8-BIT) CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD 16-BIT /1,048,576-WORD 8-BI
- M6MGT331S8BKT
- Renesas Technology Corp
- 33,554,432-BIT (2,097,152 WORD 16-BIT /4,194,304-WORD 8-BIT) CMOS FLASH MEMORY 8,388,608-BIT (524,288-WORD 16-BIT /1,048,576-WORD 8-BI
- M6MT160S4BVP
- Mitsubishi
- 16777216-bit (2097152-word by 8-bit) CMOS 3.3V-only flash memory
- M6MT162S2BVP
- Mitsubishi
- 16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memory
- M6MT162S4BVP
- Mitsubishi
- 16777216-bit (1048576-word by 16-bit) CMOS 3.3V-only flash memory
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